s m d ty p e t r a n s i s t o r s 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-base voltage v cbo 15 v collector-em itt er voltage v ceo 15 v em itt er- base v oltage v ebo 5 v continuo us collect or cur rent i c 3 a peak p ulse curre nt *1 i cm 12 a pow er dissipation at tam b =25 *2 p tot 625 m w oper ating and storage temperature ra nge t j :t stg -55 to +150 *1. measure d under pulsed c onditions. p ulse wid th=300ms . duty c ycle 2% *2.ma x im um pow er dissi pation is calc ulated assum ing that t he dev ice i s m ounted on a c eramic s ubstrate m easuring 15x 15x 0.6m m features pow er diss ipation: p tot =625mw collector current: i c =3a fmm t617ta smd type transistors smd type transistors smd type smd type smd type smd type ic smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type s m d ty p e i c t r a n s i s t o r s m d ty p e smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
s m d ty p e t r a n s i s t o r s el ectrical characteristics t a = 2 5 paramet er sym bol min typ ma x unit collector-base breakdow n voltage v (br)cbo i c =100 a 15 v collector-em itt er breakdow n voltage v (br)ceo i c =10ma * 15 v em itt er- base b reakdow n voltage v (br)ebo i e =100 a 5 v collector cut-off curre nt i cbo v cb =10v 100 na em itt er cut-o ff cur rent i ebo v eb =4v 100 na collector em itt er cut-o ff cur rent i ces v ces =10v 100 na i c =0.1a, i b =10ma * 8 14 m v i c =1a, i b =10ma * 70 100 m v i c =3a, i b =50ma * 150 200 m v base-em itt er saturation voltage v be(sat) i c =3a, i b =50ma * 0.9 1.0 v base-em itt er turn -on voltage v be(om ) i c =3a, v ce =2v* 0.84 1.0 v i c =10ma , v ce =2v* 200 415 i c =200 m a, v ce =2v* 300 450 i c =3a, v ce =2v* 200 320 i c =5a, v ce =2v* 150 240 i c =12a, v ce =2v* 80 transition freque ncy f t i c =50ma , v ce =10v,f=50m hz 80 120 mh z output capa cit ance c obo v cb =10v, f=1mhz 30 40 pf turn- on tim e t (on) v cc =10v, i c =3a 120 ns turn- off tim e t (off) i b 1=i b 2=50 m a 160 ns *m easured under pulsed c onditions. p ulse w idth=300 s . duty c ycle 2% collector-em itt er saturation voltage v ce(sat) stati c forw ard cu rre nt transfer ratio h fe test conditions s m d ty p e t r a n s i s t o r s fmm t617ta smd type transistors smd type transistors smd type smd type smd type smd type ic smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type s m d ty p e i c t r a n s i s t o r s m d ty p e smd type smd type smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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